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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Oxide HeterostructuresMaterials ScienceElectrical EngineeringElectronic DevicesEngineeringSemiconductor TechnologyOxide ElectronicsApplied PhysicsGate Stack TechnologyGermanium OxidesOptoelectronic DevicesPlasma Nitridation TechniqueSemiconductor Device