Yuya Minoura

Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Yuya Minoura, Kasuya Atsushi, Takuji Hosoi et al. · Applied Physics Letters · 2013 · 27 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +14

Comprehensive study and design of scaled metal/high-<i>k</i>/Ge gate stacks with ultrathin aluminum oxide interlayers

Ryohei Asahara, Iori Hideshima, Hiroshi Oka et al. · Applied Physics Letters · 2015 · 20 citations

Engineering, Ultrathin Aluminum, Semiconductor Device +17

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

Shingo Ogawa, Ryohei Asahara, Yuya Minoura et al. · Journal of Applied Physics · 2015 · 17 citations

Engineering, Suppressed Reaction, Chemistry +17

Phosphorous ion implantation into NiGe layer for Ohmic contact formation on n-type Ge

Yuya Minoura, Hiroshi Oka, Takuji Hosoi et al. · Japanese Journal of Applied Physics · 2014 · 14 citations

Engineering, Optoelectronic Devices, Vacuum Device +19

Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties

Takuji Hosoi, Iori Hideshima, Ryohei Tanaka et al. · Microelectronic Engineering · 2013 · 11 citations

Materials Engineering, Electrical Engineering, Engineering +12