2005 · 10 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDielectricsMetal-oxide-semiconductor Field-effect TransistorsMetalsSemiconductor Device MaterialsFermi Level PinningGate DielectricsGate LeakageGate Leakage CurrentLeakage CurrentMetal GatesPolysiliconWork Function
Substituted aluminum (SA) metal gate on high-K gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved in Ti/Al/polysilicon/HfAlON gate structure by a low temperature annealing at 450/spl deg/C. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from Fermi level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided (FUSI) metal gate.
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Fermi level pinning at the polySi/metal oxide interface
Chris Hobbs, L.M. Fonseca, V. Dhandapani et al. · 2004 · 111 citations