P. Ronsheim

Ultrathin high-K gate stacks for advanced CMOS devices

E. P. Gusev, D. A. Buchanan, E. Cartier et al. · 2002 · 196 citations

Engineering, Electrical Engineering, Materials Science +17

Universal tunneling behavior in technologically relevant P/N junction diodes

P. M. Solomon, J. Jopling, D.J. Frank et al. · Journal of Applied Physics · 2004 · 106 citations

Engineering, Electrical Engineering, Materials Science +17

Strained Si CMOS (SS CMOS) technology: opportunities and challenges

K. Rim, Robert E. Anderson, D. Boyd et al. · Solid-State Electronics · 2003 · 91 citations

Engineering, Computer Engineering, Electrical Engineering +14

High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation

Supratik Guha, E. P. Gusev, H. Schmidt et al. · Applied Physics Letters · 2002 · 78 citations

Engineering, Materials Engineering, Materials Science +17

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

T. C. Chen, G. Shahidi, Supratik Guha et al. · 2006 · 66 citations

Engineering, Electrical Engineering, Materials Science +17