G. Shahidi - Concepedia

Author

G. Shahidi

IBM (United States)ORCID

Also Known As

G. G. Shahidi, G. Shahidi, G.G. Shahidi, GHAVAM G. SHAHIDI, Ghavam G. Shahidi, Ghavam Shahidi, H.J. Hovel

148

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

IBM (United States)IBM Research - Thomas J. Watson Research Center Massachusetts Institute of Technology

About

G. Shahidi is an author at IBM (United States) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	61	2.9K
2	Applied Physics	24	38	1.5K
3	Natural Sciences	1	1	19
4	Social Sciences	1	1	39
5	Biomedical Engineering	1	1	71

G. Shahidi

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
CMOS scaling for high performance and low power-the next ten years B. Davari, R.H. Dennard, G. Shahidi Proceedings of the IEEE Hardware SecurityLow-power ElectronicsElectrical EngineeringEngineeringVlsi Design	1995	376
A new 'shift and ratio' method for MOSFET channel-length extraction Yuan Taur, D.S. Zicherman, D.R. Lombardi, IEEE Electron Device Letters Device ModelingLow-power ElectronicsElectrical EngineeringEngineeringElectronic Engineering	1992	222
SOI technology for the GHz era G. Shahidi IBM Journal of Research and Development EngineeringVlsi DesignRadio FrequencyComputer ArchitectureIntegrated Circuits	2002	190
Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers G. Shahidi, D.A. Antoniadis, Henry I. Smith IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringElectron SpectroscopyLiquid Nitrogen Temperatures	1988	132
High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation Yi Sun, E. Kiewra, J. P. de Souza, IEEE Electron Device Letters Semiconductor TechnologyGate DielectricsElectrical EngineeringAlpha-si PassivationEngineering	2008	107
Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics Sufi Zafar, C. D’Emic, Ashish V. Jagtiani, ACS Nano	2018	91
Inversion mode n-channel GaAs field effect transistor with high-k/metal gate J. P. de Souza, E. Kiewra, Yi-Chen Sun, Applied Physics Letters Electrical EngineeringEffective PassivationHigh-k/metal GateEngineeringRf Semiconductor	2008	81
A room temperature 0.1 μm CMOS on SOI G. Shahidi, Clint Anderson, B.A. Chappell, IEEE Transactions on Electron Devices Low-power ElectronicsAdvanced 0.1Electrical EngineeringμM CmosEngineering	1994	80
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET K. Cheng, A. Khakifirooz, N. Loubet,	2012	74
Partially-depleted SOI technology for digital logic G. Shahidi, A. Ajmera, F. Assaderaghi, Hardware SecurityElectrical EngineeringSoi TechnologyEngineeringVlsi Design	2003	71

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