Concepedia

Author

D.S. Zicherman

IBM Research - Thomas J. Watson Research Center

Also Known As

D. S. Zicherman, D. Zicherman, D.S. Zicherman, Zicherman

13

Publications

461

Citations

8

H-Index

18

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research CenterIBM (United States)
DZ

About

D.S. Zicherman is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, microelectronics, and low-power electronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

6

6

425

2

Applied Physics

4

4

186

3

Electrical Engineering

4

4

395

4

Computer Engineering

2

2

31

5

Electronic Devices

1

1

135

D.S. Zicherman

×

7

Publications

447

Citations

7

H-Index

YearCitations

A new 'shift and ratio' method for MOSFET channel-length extraction

Yuan Taur, D.S. Zicherman, D.R. Lombardi,

IEEE Electron Device Letters

1992

222

Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's

G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern,

IEEE Electron Device Letters

1987

135

Experimental technology and characterization of self-aligned 0.1µm-gate-length low-temperature operation NMOS devices

G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern,

1987

24

A highly latchup-immune 1-&amp;#181;m CMOS technology fabricated with 1-MeV ion implantation and self-aligned TiSi<sub>2</sub>

Fang-Shi J. Lai, L.K. Wang, Yuan Taur,

IEEE Transactions on Electron Devices

1986

22

Design and characterization of a CMOS off-chip driver/receiver with reduced power-supply disturbance

H.I. Hanafi, R.H. Dennard, C.-L. Chen,

IEEE Journal of Solid-State Circuits

1992

17

A high performance BiCMOS technology using 0.25 mu m CMOS and double poly 47 GHz bipolar

G. Shahidi, J. Warnock, B. Davari,

2003

14

Effects of X-Ray Irradiation on the Channel Hot-Carrier Reliability of Thin-Oxide n-Channel MOSFETs

J.Y.-C. Sun, José R. Maldonado, M. D. Rodríguez,

1986

13

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