Fang-Shi J. Lai - Concepedia

Author

Fang-Shi J. Lai

IBM Research - Thomas J. Watson Research Center

Also Known As

Fang-Shi J. Lai

Publications

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

Fang-Shi J. Lai is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, electrical engineering, and nanoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	2	2	30
2	Applied Physics	2	2	30
3	Electrical Engineering	2	2	30
4	Materials Engineering	1	1	12
5	Materials Science	1	1	12

Fang-Shi J. Lai

Publications

Citations

H-Index

Page 1

	Year	Citations
A highly latchup-immune 1-&#181;m CMOS technology fabricated with 1-MeV ion implantation and self-aligned TiSi<sub>2</sub> Fang-Shi J. Lai, L.K. Wang, Yuan Taur, IEEE Transactions on Electron Devices	1986	22
An analytical one-dimensional model for lightly doped drain (LDD) MOSFET devices Fang-Shi J. Lai, J.Y.-C. Sun IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringIntrinsic MosfetEngineeringSemiconductor Device	1985	18
Design and characteristics of a lightly doped drain (LDD) device fabricated with self-aligned titanium disilicide Fang-Shi J. Lai, J.Y.-C. Sun, S.H. Dhong IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringTitanium Disilicide Process	1986	12

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