Concepedia

Fang-Shi J. Lai

FJ

3

Publications

52

Citations

3

H-Index

1985

Active since

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

IBM (United States)

Fang-Shi J. Lai is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, electrical engineering, and nanoelectronics.

Top concepts

Publications per year

1985–1986

3

Publications

3

A highly latchup-immune 1-&amp;#181;m CMOS technology fabricated with 1-MeV ion implantation and self-aligned TiSi<sub>2</sub>

Fang-Shi J. Lai, L.K. Wang, Yuan Taur et al. · IEEE Transactions on Electron Devices · 1986 · 22 citations

An analytical one-dimensional model for lightly doped drain (LDD) MOSFET devices

Fang-Shi J. Lai, J.Y.-C. Sun · IEEE Transactions on Electron Devices · 1985 · 18 citations

, , +14

Design and characteristics of a lightly doped drain (LDD) device fabricated with self-aligned titanium disilicide

Fang-Shi J. Lai, J.Y.-C. Sun, S.H. Dhong · IEEE Transactions on Electron Devices · 1986 · 12 citations

, , +15

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