M.R. Wordeman

Generalized scaling theory and its application to a ¼ micrometer MOSFET design

G. Baccarani, M.R. Wordeman, R.H. Dennard · IEEE Transactions on Electron Devices · 1984 · 439 citations

Engineering, Electrical Engineering, Electronic Materials +16

An investigation of steady-state velocity overshoot in silicon

G. Baccarani, M.R. Wordeman · Solid-State Electronics · 1985 · 367 citations

Engineering, Electrical Engineering, Microelectronics +8

A new 'shift and ratio' method for MOSFET channel-length extraction

D.S. Zicherman, D.R. Lombardi, P.J. Restle et al. · IEEE Electron Device Letters · 1992 · 223 citations

Engineering, Electrical Engineering, Electronic Materials +14

Wafer-level 3D integration technology

Steven J. Koester, Anthony Young, R. Yu et al. · IBM Journal of Research and Development · 2008 · 177 citations

Engineering, Manufacturing Engineering, Computer-integrated Manufacturing +15

High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern et al. · IEEE Electron Device Letters · 1988 · 169 citations

Engineering, Electrical Engineering, Microelectronics +14