G.A. Sai-Halasz - Concepedia

Author

G.A. Sai-Halasz

IBM Research - Thomas J. Watson Research Center

Also Known As

G. A. SAI‐HALASZ, G. A. Sai-Halasz, G. A. Sai‐Halasz, G. A. Sai–Halasz, G. Sai-Halasz, G.A. Sai-Halasz

Publications

4.9K

Citations

H-Index

101

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

G.A. Sai-Halasz is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	49	4.7K
2	Applied Physics	24	33	3.4K
3	Natural Sciences	5	5	248
4	Health Sciences	1	1	21
5	Chemical Engineering	1	1	21

G.A. Sai-Halasz

Publications

4.8K

Citations

H-Index

Page 1

	Year	Citations
CMOS scaling into the nanometer regime Yuan Taur, D. A. Buchanan, Wei Chen, Proceedings of the IEEE EngineeringVlsi DesignSilicon On InsulatorNanoelectronicsCmos Technology	1997	882
A new semiconductor superlattice G.A. Sai-Halasz, Raphael Tsu, L. Esaki Applied Physics Letters SemiconductorsMaterials ScienceHigh-tc SuperconductivityEngineeringTunneling Probability	1977	562
When are transmission-line effects important for on-chip interconnections? A. Deutsch, G.V. Kopcsay, P.J. Restle, IEEE Transactions on Microwave Theory and Techniques Short LinesElectrical EngineeringEngineeringVlsi DesignOn-chip Interconnections	1997	382
InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition G.A. Sai-Halasz, L. Esaki, Walter A. Harrison Physical review. B, Condensed matter SemiconductorsEngineeringPhysicsInas-gasb SuperlatticeApplied Physics	1978	282
Performance trends in high-end processors G.A. Sai-Halasz Proceedings of the IEEE Cmos ProcessorsEngineeringVlsi DesignBipolar ProcessorsEnergy Efficiency	1995	222
In1−<i>x</i>Ga<i>x</i>As-GaSb1−<i>y</i>As<i>y</i> heterojunctions by molecular beam epitaxy H. Sakaki, L. L. Chang, R. Ludeke, Applied Physics Letters SemiconductorsMaterials ScienceDownward BowingWide-bandgap SemiconductorEngineering	1977	201
Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices G.A. Sai-Halasz, L. L. Chang, J.‐M. Welter, Solid State Communications	1978	178
High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern, IEEE Electron Device Letters Device ModelingElectrical EngineeringGate LengthVelocity OvershootVlsi Design	1988	168
VLSI on-chip interconnection performance simulations and measurements D. Edelstein, G.A. Sai-Halasz, Y. J. Mii IBM Journal of Research and Development Electrical EngineeringEngineeringVlsi DesignElectrical Performance IssuesVlsi Architecture	1995	140
Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern, IEEE Electron Device Letters Low-power ElectronicsDevice ModelingElectrical EngineeringElectronic DevicesEngineering	1987	135

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