Applied Physics Letters · 1977 · 564 citations · 15 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsAb Initio MethodsElectronic Band StructureQuantum TunnelingSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsConductionConduction BandSuperlatticesTunneling In SemiconductorsTunneling PhenomenaTunneling ProbabilityValence BandValence Band Structure
We treat theoretically, through the use of Bloch functions, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role. The result indicates that this superlattice offers new intriguing features, realizable with the In1−xGaxAs-GaSb1−y Asy system. In addition, the tunneling probability is calculated across a barrier involving this system.
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Band structure of indium antimonide
E. O. Kane · Journal of Physics and Chemistry of Solids · 1957 · 3.7K citations
Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations