IEEE Transactions on Electron Devices · 1996 · 52 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignDevice CharacterizationDevice ModelingDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsChannel EffectChannel Length ScalingElectric Field DistributionGate Oxide Thickness EffectsGate-dependent Current-voltage BehaviorSubthreshold SwingThreshold VoltageThreshold Voltage Roll-off
Sub-0.1-/spl mu/m planar and gate recessed MOSFET's are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO/sub 2/ interface.
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Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions
Mizuki Ono, M. Saito, T. Yoshitomi et al. · 2002 · 105 citations