Concepedia

Gate-dependent Current-voltage Behavior

Gate-Dependent Current-Voltage Behavior is a semiconductor device characteristic that describes the variation in current-voltage relationships as a function of applied gate voltage, distinguishing it from fixed-bias current-voltage behaviors by explicitly capturing the modulation of carrier transport through the gate-controlled electric field in field-effect devices.

1.1K

Publications

43.3K

Citations

3.8K

Authors

811

Institutions

Publications per year

2017–2026

196

Parents

Publications

1.1K

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters · 2012 · 1.8K citations

, , +17

Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's

J.G. Fossum · IEEE Transactions on Electron Devices · 1983 · 689 citations

, , +17

GaAs FET device and circuit simulation in SPICE

H. Statz, P. G. Newman, I. W. Smith et al. · IEEE Transactions on Electron Devices · 1987 · 518 citations

, , +16

Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

F. Assaderaghi, D. Sinitsky, S. Parke et al. · IEEE Transactions on Electron Devices · 1997 · 436 citations

, , +15

Physics of amorphous silicon based alloy field-effect transistors

M. S. Shur, M. Hack · Journal of Applied Physics · 1984 · 416 citations

, , +17

1–5 of 1.1K

Authors

3.8K

  1. MS
    M. S. Shur

    Rensselaer Polytechnic Institute, United States

    24 publications · 1.7K citations

    20

    h-index

  2. BJ
    B. Jayant Baliga

    North Carolina State University, United States

    13 publications · 365 citations

    13

    h-index

  3. GG
    G. Ghibaudo

    Institut de Microélectronique, Electromagnétisme et Photonique, France

    13 publications · 316 citations

    12

    h-index

  4. DF
    Denis Flandre

    UCLouvain, Belgium

    12 publications · 411 citations

    11

    h-index

  5. KJ
    Kevin J. Chen

    Hong Kong University of Science and Technology, Hong Kong SAR China

    11 publications · 501 citations

    11

    h-index

1–5 of 3.8K

Institutions

811

  1. IMEC

    Leuven, Belgium

    17 h-index

    97 publications

    4.9K citations

  2. IBM (United States)

    Armonk, United States

    16 h-index

    107 publications

    3.6K citations

  3. CEA Grenoble

    Grenoble, France

    15 h-index

    46 publications

    2.6K citations

  4. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    14 h-index

    36 publications

    2.2K citations

  5. University of Cambridge

    Cambridge, United Kingdom

    14 h-index

    56 publications

    3K citations

  6. University of Minnesota

    Minneapolis, United States

    14 h-index

    33 publications

    2.5K citations

  7. KU Leuven

    Leuven, Belgium

    14 h-index

    54 publications

    3K citations

  8. Toshiba (Japan)

    Tokyo, Japan

    14 h-index

    46 publications

    1.4K citations

1–8 of 811

Venues

  1. IEEE Transactions on Electron Devices

    152 publications · 7.7K citations

    46

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  2. IEEE Electron Device Letters

    102 publications · 5.9K citations

    44

    h-index

  3. Applied Physics Letters

    72 publications · 5.7K citations

    33

    h-index

  4. Solid-State Electronics

    98 publications · 3.3K citations

    32

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 43 publications · 1.3K citations

    19

    h-index

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