P. G. Newman

GaAs FET device and circuit simulation in SPICE

H. Statz, P. G. Newman, I. W. Smith et al. · IEEE Transactions on Electron Devices · 1987 · 516 citations

Device Modeling, Electrical Engineering, Semiconductor Device +8

Photoreflectance study of surface Fermi level in GaAs and GaAlAs

H. Shen, Mitra Dutta, L. Fotiadis et al. · Applied Physics Letters · 1990 · 131 citations · Full text

Photonics, Engineering, Physics +12

Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics study

A. Madhukar, T. C. Lee, M. Y. Yen et al. · Applied Physics Letters · 1985 · 87 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Inverted Interface +16

Protection of molecular beam epitaxy grown Al<i>x</i>Ga1−<i>x</i>As epilayers during ambient transfer

S. P. Kowalczyk, D. L. Miller, J. R. Waldrop et al. · Journal of Vacuum Science and Technology · 1981 · 82 citations

Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/Al<i>x</i>Ga1−<i>x</i>As quantum wells

F. Voillot, A. Madhukar, J. Y. Kim et al. · Applied Physics Letters · 1986 · 63 citations

Inverted Interfaces, Engineering, Semiconductor Nanostructures +17