F. Voillot

Atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures and its consequences for photoluminescence behavior

S. B. Ogale, A. Madhukar, F. Voillot et al. · Physical review. B, Condensed matter · 1987 · 63 citations

Semiconductors, Atomistic Nature, Ii-vi Semiconductor +14

Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/Al<i>x</i>Ga1−<i>x</i>As quantum wells

F. Voillot, A. Madhukar, J. Y. Kim et al. · Applied Physics Letters · 1986 · 63 citations

Inverted Interfaces, Engineering, Semiconductor Nanostructures +17

Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

J.P. Peyrade, F. Voillot, M. Goiran et al. · Applied Physics Letters · 1992 · 28 citations

Engineering, Severe Plastic Deformation, Mechanical Engineering +24

Synthesis and growth of large stoichiometric single crystals of copper indium diselenide by horizontal varying gradient zone freeze technique

Marie-Ange Arsène, A. Albacete, F. Voillot et al. · Journal of Crystal Growth · 1996 · 26 citations

Materials Science, Copper Indium Diselenide, Engineering +6

A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structures

A. Madhukar, P. Chen, F. Voillot et al. · Journal of Crystal Growth · 1987 · 26 citations

Photoluminescence, Engineering, Physics +8