A. Madhukar

Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)

Qianghua Xie, A. Madhukar, Ping Chen et al. · Physical Review Letters · 1995 · 1.3K citations

Coherent Inas Islands, Epitaxial Growth, Engineering +10

Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained In<i>x</i>Ga1−<i>x</i>As on GaAs(100)

Supratik Guha, A. Madhukar, K. C. Rajkumar · Applied Physics Letters · 1990 · 660 citations

Semiconductors, Engineering, Crystalline Defects +12

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

F. J. Grunthaner, P. J. Grunthaner, R. P. Vasquez et al. · Journal of Vacuum Science and Technology · 1979 · 332 citations

High-resolution Xps, Engineering, Silicon On Insulator +18

Collective modes of spatially separated, two-component, two-dimensional plasma in solids

S. Das Sarma, A. Madhukar · Physical review. B, Condensed matter · 1981 · 300 citations

Plasmonics, Quantum Science, Engineering +14

Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)

A. Madhukar, Qiwei Xie, P. Chen et al. · Applied Physics Letters · 1994 · 237 citations

Materials Science, Engineering, Physics +11