K. C. Rajkumar

Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained In<i>x</i>Ga1−<i>x</i>As on GaAs(100)

Supratik Guha, A. Madhukar, K. C. Rajkumar · Applied Physics Letters · 1990 · 660 citations

Semiconductors, Engineering, Crystalline Defects +12

Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111)<i>B</i> substrates

P. Chen, K. C. Rajkumar, A. Madhukar · Applied Physics Letters · 1991 · 63 citations

Engineering, Crystal Growth Technology, Specular Surface +16

Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B

K. C. Rajkumar, A. Madhukar, Kottil Rammohan et al. · Applied Physics Letters · 1993 · 54 citations · Full text

Optical Materials, Engineering, First Realization +17

<i>In</i> <i>situ</i> approach to realization of three-dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates

A. Madhukar, K. C. Rajkumar, P. Chen · Applied Physics Letters · 1993 · 50 citations

Engineering, First Realization, One-step Growth +16

In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates

A. Konkar, K. C. Rajkumar, Qiwei Xie et al. · Journal of Crystal Growth · 1995 · 33 citations

Materials Science, Electrical Engineering, Engineering +8