A fully scaled submicrometer NMOS technology using direct-write E-beam lithography

Abstract

Fully scaled NMOS devices, circuits, and dynamic memory with 1/2-µm nominal minimum dimensions at each level have been fabricated using direct-write e-beam patterning. This high-density NMOS technology yields nominally loaded average gate delays of 650 ps/stage with a power dissipation of 38 µW. The characteristics of this technology are presented with specific emphasis placed on features of the design which are unique to submicrometer MOSFET's, including a study of nonscaling effects and their impact on the device and circuit design.