Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

R. Vetury, N.Q. Zhang, S. Keller et al. · IEEE Transactions on Electron Devices · 2001 · 1.4K citations

Engineering, Electrical Engineering, Materials Science +17

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson, P. Fini, K. D. Ness et al. · Applied Physics Letters · 2000 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 638 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Trapping effects in GaN and SiC microwave FETs

S.C. Binari, P. B. Klein, T.E. Kazior · Proceedings of the IEEE · 2002 · 454 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

Mustapha Faqir, G. Verzellesi, Gaudenzio Meneghesso et al. · IEEE Transactions on Electron Devices · 2008 · 139 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17