Nathalie Malbert

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

A. Sozza, C. Dua, E. Morvan et al. · 2006 · 84 citations

Wide-bandgap Semiconductor, Engineering, Energy Efficiency +17

A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs

Amit Kumar Sahoo, Sébastien Frégonèse, Mario Weis et al. · IEEE Transactions on Electron Devices · 2012 · 31 citations

Engineering, Semiconductor Device, Electronic Devices +18

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Mustapha Faqir, Mohsine Bouya, Nathalie Malbert et al. · Microelectronics Reliability · 2010 · 28 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Impact of back-end-of-line on thermal impedance in SiGe HBTs

Anuj Kumar Sahoo, S. Frégonèse, Matthias Weis et al. · 2013 · 21 citations

Backend Layers, Engineering, Integrated Circuits +17

Thermal Impedance Modeling of Si–Ge HBTs From Low-Frequency Small-Signal Measurements

Amit Kumar Sahoo, Sébastien Frégonèse, Thomas Zimmer et al. · IEEE Electron Device Letters · 2010 · 19 citations

Engineering, Thermal Impedance Modeling, Frequency-domain Thermal Impedance +16