Sébastien Frégonèse

Author

Sébastien Frégonèse

Also Known As

Fregonese, S., Fregonese, S. (Sebastien), Fregonese, S. (Sébastien), Fregonese, Sebastien, Fregonese, Sébastien, Frégonèse, S., Frégonèse, Sébastien, S. Fregonese, S. Frégonèse, Sebastien Fregonese

262

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Université de Bordeaux Institut Polytechnique de Bordeaux Laboratoire de l'Intégration du Matériau au Système Centre National de la Recherche Scientifique STMicroelectronics (France)

About

Sébastien Frégonèse is an author at Université de Bordeaux specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	40	1.1K
2	Applied Physics	16	26	508
3	Computer Engineering	10	10	482
4	Education	5	5	197
5	Social Sciences	1	1	18

Sébastien Frégonèse

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
CNTFET Modeling and Reconfigurable Logic-Circuit Design Ian O’Connor, Junchen Liu, F. Gaffiot, IEEE Transactions on Circuits and Systems I Regular Papers EngineeringVlsi DesignElectronic DesignComputer ArchitecturePower Electronics	2007	167
Computationally Efficient Physics-Based Compact CNTFET Model for Circuit Design Sébastien Frégonèse, H. Cazin d’Honincthun, Johnny Goguet, IEEE Transactions on Electron Devices EngineeringCnt Diameter DispersionSimulationPower Electronic SystemsConventional Cntfet	2008	93
SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems Thomas Zimmer, J. Böck, Fred Buchali, IEEE Journal of Microwaves EngineeringRadio FrequencyFuture Millimeter-wave SystemsEducationElectromagnetic Compatibility	2021	77
Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz Sébastien Frégonèse, Marina Deng, Magali De Matos, IEEE Transactions on Terahertz Science and Technology EngineeringMeasurementEducationElectromagnetic CompatibilityRf Semiconductor	2018	50
On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands Sébastien Frégonèse, Magali De Matos, Marina Deng, IEEE Transactions on Microwave Theory and Techniques EngineeringMeasurementEducationProbe DeformationElectromagnetic Compatibility	2018	42
A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation M. Schröter, Steffen Lehmann, Sébastien Frégonèse, IEEE Transactions on Electron Devices Numerical AnalysisEngineeringModel FormulationComputational MechanicsPower Electronics	2006	36
Electrical compact modelling of graphene transistors Sébastien Frégonèse, Nan Meng, Huu-Nha Nguyen, Solid-State Electronics Electrical EngineeringEngineeringNanoelectronicsApplied PhysicsGraphene Transistors	2012	33
Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz Chandan Yadav, Marina Deng, Sébastien Frégonèse, IEEE Transactions on Terahertz Science and Technology Thz PhotonicsEngineeringComprehensive ElectromagneticTerahertz PhotonicsElectromagnetic Compatibility	2020	33
A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs Amit Kumar Sahoo, Sébastien Frégonèse, Mario Weis, IEEE Transactions on Electron Devices EngineeringSemiconductor DeviceElectronic DevicesNanoelectronicsElectronic Engineering	2012	31
A self-aligned vertical HBT for thin SOI SiGeC BiCMOS G. Avenier, T. Schwartzmann, P. Chevalier, Electrical EngineeringEngineeringVlsi DesignPhysicsSelf-aligned Vertical Hbt	2005	30

Page 1