Dominique Carisetti

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs

Michele Piazza, C. Dua, M. Oualli et al. · Microelectronics Reliability · 2009 · 63 citations

Materials Science, Wide-bandgap Semiconductor, Gan Hemts +5

Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions

Lény Baczkowski, Jean-Claude Jacquet, Olivier Jardel et al. · IEEE Transactions on Electron Devices · 2015 · 50 citations

Wide-bandgap Semiconductor, Engineering, Rf Semiconductor +17

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Mohsine Bouya, N. Malbert, Nathalie Labat et al. · Microelectronics Reliability · 2008 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Mustapha Faqir, Mohsine Bouya, Nathalie Malbert et al. · Microelectronics Reliability · 2010 · 28 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Laurent Brunel, Benoît Lambert, P. Mezenge et al. · Microelectronics Reliability · 2013 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5