Nathalie Labat

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Mohsine Bouya, N. Malbert, Nathalie Labat et al. · Microelectronics Reliability · 2008 · 33 citations

Engineering, Electrical Engineering, Materials Science +15

A 10 GHz dielectric resonator oscillator using GaN technology

P. Rice, M. Moore, A.R. Barnes et al. · 2004 · 31 citations

Engineering, Electrical Engineering, Microelectronics +16

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Mustapha Faqir, Mohsine Bouya, Nathalie Malbert et al. · Microelectronics Reliability · 2010 · 29 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Laurent Brunel, Benoît Lambert, P. Mezenge et al. · Microelectronics Reliability · 2013 · 29 citations

Engineering, Electrical Engineering, Materials Science +16

Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation

Thomas Zimmer, D. Ouro Bodi, Jean-Michel Dumas et al. · Solid-State Electronics · 1992 · 28 citations

Natural Sciences, Materials Science, Computational Physics +4