Publication | Closed Access
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
28
Citations
16
References
2013
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringHtrb StressApplied PhysicsAluminum Gallium NitrideGan Power DeviceAlgan/gan Hemts
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