Concepedia

Author

D. Floriot

United Monolithic Semiconductor (France)

Also Known As

D. Floriot, Didier Floriot, Floriot, D., Floriot, Didier, P. Eudeline

98

Publications

1.1K

Citations

17

H-Index

30

Concepts

All Affiliations

United Monolithic Semiconductor (France)Université de LimogesUnited Monolithic Semiconductors (Germany)Thales (France)III V Lab
DF

About

D. Floriot is an author at United Monolithic Semiconductor (France) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

17

26

819

2

Electrical Engineering

17

26

819

3

Applied Physics

12

13

553

4

Industrial Engineering

1

1

19

5

Materials Engineering

1

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11

D. Floriot

×

30

Publications

894

Citations

17

H-Index

YearCitations

An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

Olivier Jardel, Fabien de Groote, Tibault Reveyrand,

IEEE Transactions on Microwave Theory and Techniques

2007

289

A Drain-Lag Model for AlGaN/GaN Power HEMTs

Olivier Jardel, Fabien de Groote, C. Charbonniaud,

IEEE MTT-S International Microwave Symposium digest

2007

51

43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers

S. Piotrowicz, Z. Ouarch, E. Chartier,

2010 IEEE MTT-S International Microwave Symposium

2010

47

An active pulsed RF and pulsed DC load-pull system for the characterization of HBT power amplifiers used in coherent radar and communication systems

C. Arnaud, D. Basataud, Jean-Michel Nébus,

IEEE Transactions on Microwave Theory and Techniques

2000

36

GH25-10: New qualified power GaN HEMT process from technology to product overview

D. Floriot, V. Brunel, M. Camiade,

2014

32

Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band

Valeria Di Giacomo-Brunel, Estelle Byk, Christophe Chang,

2018

29

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Laurent Brunel, Benoît Lambert, P. Mezenge,

Microelectronics Reliability

2013

28

A design method for high efficiency class F HBT amplifiers

Alain Mallet, T. Peyretailade, Raphaël Sommet,

2002

24

A 90% power-added-efficiency GaInP/GaAs HBT for L-band radar and mobile communication systems

Alain Mallet, D. Floriot, J.P. Viaud,

IEEE Microwave and Guided Wave Letters

1996

22

Wideband 50W packaged GaN HEMT with over 60% PAE through internal harmonic control in S-band

Jérôme Chéron, Michel Campovecchio, Denis Barataud,

2012

22

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