Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

New method for the extraction of MOSFET parameters

G. Ghibaudo · Electronics Letters · 1988 · 831 citations

Engineering, Electrical Engineering, Microelectronics +15

Fermi-level pinning and charge neutrality level in germanium

A. Dimoulas, Polychronis Tsipas, A. Sotiropoulos et al. · Applied Physics Letters · 2006 · 605 citations

Natural Sciences, Materials Science, Physics +17

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Koen Martens, Chi On Chui, Guy Brammertz et al. · IEEE Transactions on Electron Devices · 2008 · 363 citations

Engineering, Electrical Engineering, Materials Science +17

Germanium channel MOSFETs: Opportunities and challenges

Huiling Shang, Martin M. Frank, E. P. Gusev et al. · IBM Journal of Research and Development · 2006 · 186 citations

Engineering, Electrical Engineering, Materials Science +17

A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

Tsutomu Tezuka, Naoharu Sugiyama, Tomohisa Mizuno et al. · Japanese Journal of Applied Physics · 2001 · 185 citations

Engineering, Electrical Engineering, Materials Engineering +16