A. Sotiropoulos - Concepedia

Concepedia

Author

A. Sotiropoulos

National Centre of Scientific Research "Demokritos"

Also Known As

A SOTIROPOULOS, A Sotiropoulos, A. Sotiropoulos, A.K Sotiropoulos, A.K. Sotiropoulos, Andreas Sotiropoulos

33

Publications

1.4K

Citations

16

H-Index

31

Concepts

All Affiliations

National Centre of Scientific Research "Demokritos"KU Leuven École Polytechnique Fédérale de Lausanne University of Ioannina IMEC

AS

About

A. Sotiropoulos is an author at National Centre of Scientific Research "Demokritos" specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	17	1.3K
2	Applied Physics	16	17	1.3K
3	Electrical Engineering	9	9	958
4	Chemical Engineering	2	2	74
5	Chemistry	2	2	111

A. Sotiropoulos

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18

Publications

1.4K

Citations

16

H-Index

	Year	Citations
Fermi-level pinning and charge neutrality level in germanium A. Dimoulas, Polychronis Tsipas, A. Sotiropoulos, Applied Physics Letters Electrical EngineeringSchottky Barrier HeightEngineeringPhysicsNanoelectronics	2006	595
Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices G. Mavrou, S. Galata, Polychronis Tsipas, Journal of Applied Physics EngineeringLow DensitySilicon On InsulatorGermanium Metal-insulator-semiconductor CapacitorsElectrical Properties	2008	117
Interface engineering for Ge metal-oxide–semiconductor devices A. Dimoulas, D.P. Brunco, S. Ferrari, Thin Solid Films Oxide HeterostructuresEngineeringOxide ElectronicsInterface EngineeringOxide Semiconductors	2007	88
Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks Polychronis Tsipas, S.N. Volkos, A. Sotiropoulos, Applied Physics Letters Oxide HeterostructuresMaterials ScienceIi-vi SemiconductorEngineeringCrystalline Defects	2008	60
Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates G. Mavrou, Polychronis Tsipas, A. Sotiropoulos, Applied Physics Letters Materials ScienceOxide HeterostructuresElectrical EngineeringGermanium SubstratesInterfacial Layers	2008	59
Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors A. Dimoulas, G. Vellianitis, G. Mavrou, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2005	57
Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators V. V. Afanas’ev, S. Shamuilia, A. Stesmans, Applied Physics Letters Materials ScienceOxide HeterostructuresEngineeringPhysicsRare-earth Oxide Insulators	2006	55
The role of La surface chemistry in the passivation of Ge A. Dimoulas, Dimitra Tsoutsou, Y. Panayiotatos, Applied Physics Letters Materials ScienceSurface CharacterizationChemical EngineeringVolatile GeoEngineering	2010	52
Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition Dimitra Tsoutsou, S. Galata, Polychronis Tsipas, Journal of Applied Physics Materials ScienceOxide HeterostructuresIi-vi SemiconductorEngineeringHigh-k Tetragonal Phase	2009	38
Epitaxial germanium-on-insulator grown on (001) Si Jin Won Seo, Ch. Dieker, A. Tapponnier, Microelectronic Engineering Applied PhysicsMolecular Beam EpitaxySilicon On InsulatorEpitaxial GrowthEpitaxial Germanium-on-insulator Grown	2007	37

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