G. Mavrou

Hf O 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

A. Dimoulas, G. Mavrou, G. Vellianitis et al. · Applied Physics Letters · 2005 · 151 citations

Oxide Heterostructures, Semiconductor Technology, Electrical Engineering +13

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

G. Mavrou, S. Galata, Polychronis Tsipas et al. · Journal of Applied Physics · 2008 · 117 citations · Full text

Engineering, Low Density, Silicon On Insulator +17

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Andrew Ritenour, A. Khakifirooz, D.A. Antoniadis et al. · Applied Physics Letters · 2006 · 73 citations

Electrical Engineering, Engineering, Nanoelectronics +10

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

Polychronis Tsipas, S.N. Volkos, A. Sotiropoulos et al. · Applied Physics Letters · 2008 · 60 citations

Oxide Heterostructures, Materials Science, Ii-vi Semiconductor +14

Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

G. Mavrou, Polychronis Tsipas, A. Sotiropoulos et al. · Applied Physics Letters · 2008 · 59 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +14