G. Vellianitis

Hf O 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

A. Dimoulas, G. Mavrou, G. Vellianitis et al. · Applied Physics Letters · 2005 · 151 citations

Oxide Heterostructures, Semiconductor Technology, Electrical Engineering +13

Structural and electrical quality of the high-<i>k</i> dielectric Y2O3 on Si (001): Dependence on growth parameters

A. Dimoulas, G. Vellianitis, A. Travlos et al. · Journal of Applied Physics · 2002 · 83 citations

Engineering, Ultrahigh Vacuum, Thin Film Process Technology +16

Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

M.J.H. van Dal, Nadine Collaert, G. Doornbos et al. · 2007 · 79 citations

Engineering, Integrated Circuits, Interconnect (Integrated Circuits) +18

Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping

M.J.H. van Dal, G. Vellianitis, B. Duriez et al. · IEEE Transactions on Electron Devices · 2014 · 67 citations

Electrical Engineering, Engineering, Aspect Ratio Trapping +10

Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-<i>k</i> gate dielectric applications

A. Dimoulas, A. Travlos, G. Vellianitis et al. · Journal of Applied Physics · 2001 · 65 citations

Direct Heteroepitaxy, Engineering, Microstructural Characteristics +18