S. Galata

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

G. Mavrou, S. Galata, Polychronis Tsipas et al. · Journal of Applied Physics · 2008 · 117 citations · Full text

Engineering, Low Density, Silicon On Insulator +17

Interface engineering for Ge metal-oxide–semiconductor devices

A. Dimoulas, D.P. Brunco, S. Ferrari et al. · Thin Solid Films · 2007 · 88 citations

Oxide Heterostructures, Engineering, Oxide Electronics +5

Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks

Polychronis Tsipas, S.N. Volkos, A. Sotiropoulos et al. · Applied Physics Letters · 2008 · 60 citations

Oxide Heterostructures, Materials Science, Ii-vi Semiconductor +14

Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

G. Mavrou, Polychronis Tsipas, A. Sotiropoulos et al. · Applied Physics Letters · 2008 · 59 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +14

The role of La surface chemistry in the passivation of Ge

A. Dimoulas, Dimitra Tsoutsou, Y. Panayiotatos et al. · Applied Physics Letters · 2010 · 52 citations

Materials Science, Surface Characterization, Chemical Engineering +12