E. Augendre

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers

Badhise Ben Bakir, Antoine Descos, Nicolas Olivier et al. · Optics Express · 2011 · 132 citations · Full text

Photonic Device, Photonics, Electrical Engineering +12

"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs

A. Mercha, J.M. Rafı́, Eddy Simoen et al. · IEEE Transactions on Electron Devices · 2003 · 115 citations

Device Modeling, Linear Kink Effect, Electrical Engineering +15

Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

Sylvain Barraud, V. Lapras, Marie-Pierre Samson et al. · 2016 · 108 citations · Full text

Engineering, Inner Spacer, Integrated Circuits +16

Impact of technology scaling on the input and output features of RF-MOSFETs: effects and modeling

Reydezel Torres‐Torres, Roberto S. Murphy‐Arteaga, E. Augendre et al. · 2004 · 100 citations

Device Modeling, Electrical Engineering, Engineering +11

Spin pumping and inverse spin Hall effect in germanium

Juan‐Carlos Rojas‐Sánchez, M. Cubukcu, A. Jain et al. · Physical Review B · 2013 · 85 citations · Full text