E. Augendre - Concepedia

Author

E. Augendre

Commissariat à l'Énergie Atomique et aux Énergies Alternatives ORCID

Also Known As

A. Affum Emmanuel, A. Emmanuel, Akese Emmanuel, Augendre Emmanuel, Augendre, E., Augendre, Emmanuel, E Augendre, E. Augendre, Emmanuel Augendre, J. Zhang

169

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d'Électronique des Technologies de l'Information CEA Grenoble Institut polytechnique de Grenoble IMEC

About

E. Augendre is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	60	1.8K
2	Applied Physics	24	53	1.5K
3	Medicine	1	1	12
4	Natural Sciences	1	1	29
5	Biomedical Engineering	1	1	10

E. Augendre

Publications

Citations

H-Index

Page 1

	Year	Citations
Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers Badhise Ben Bakir, Antoine Descos, Nicolas Olivier, Optics Express Photonic DevicePhotonicsElectrical EngineeringEngineeringApplied Physics	2011	132
"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs A. Mercha, J.M. Rafı́, Eddy Simoen, IEEE Transactions on Electron Devices Device ModelingLinear Kink EffectElectrical EngineeringEngineeringTunneling Microscopy	2003	115
Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain Sylvain Barraud, V. Lapras, Marie-Pierre Samson, EngineeringInner SpacerIntegrated CircuitsSilicon On InsulatorSemiconductor Device	2016	108
Impact of technology scaling on the input and output features of RF-MOSFETs: effects and modeling Reydezel Torres‐Torres, Roberto S. Murphy‐Arteaga, E. Augendre, Device ModelingElectrical EngineeringEngineeringRf SemiconductorTechnology Scaling	2004	100
Spin pumping and inverse spin Hall effect in germanium Juan‐Carlos Rojas‐Sánchez, M. Cubukcu, A. Jain, Physical Review B	2013	85
Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band A. Jain, Juan‐Carlos Rojas‐Sánchez, M. Cubukcu, Physical Review Letters	2012	84
A Low-Power Multi-Gate FET CMOS Technology with 13.9ps Inverter Delay, Large-Scale Integrated High Performance Digital Circuits and SRAM K. von Arnim, E. Augendre, A.C. Pacha, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignMixed-signal Integrated Circuit	2007	76
CMOS device optimization for mixed-signal technologies P.A. Stolk, Hans Tuinhout, Ray Duffy, Electrical EngineeringEngineeringVlsi DesignAnalog Integrated CircuitsCmos Technologies	2002	58
Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals Ray Duffy, T. Dao, Y. Tamminga, Applied Physics Letters Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringPhysics	2006	55
Enhanced Fiber Grating Coupler Integrated by Wafer-to-Wafer Bonding Christophe Kopp, E. Augendre, Régis Orobtchouk, Journal of Lightwave Technology PhotonicsOptical MaterialsOptical InterconnectsEngineeringDevice Integration	2011	43

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