Parasitic Element Modeling
Parasitic Element Modeling is a systematic analytical framework that characterizes unintended resistive, inductive, and capacitive behaviors inherent in physical components and interconnects within high-frequency power conversion systems to enable accurate prediction and mitigation of performance-limiting effects.
546
Publications
21.9K
Citations
1.7K
Authors
500
Institutions
Publications per year
2017–2026
120
546
E.P. Vandamme, Dominique Schreurs, G. Van Dinther · IEEE Transactions on Electron Devices · 2001 · 256 citations
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Virginia Tech
Blacksburg, United States
17 h-index
68 publications
4.8K citations

Centre National de la Recherche Scientifique
Paris, France
13 h-index
42 publications
1.3K citations
ETH Zurich
Zurich, Switzerland
11 h-index
32 publications
1.8K citations

Université Grenoble Alpes
Saint-Martin-d'Hères, France
11 h-index
52 publications
1.5K citations
Wright State University
Dayton, United States
10 h-index
17 publications
825 citations
Tsinghua University
Beijing, China
10 h-index
26 publications
834 citations
Massachusetts Institute of Technology
Cambridge, United States
10 h-index
21 publications
1.2K citations

Delft University of Technology
Delft, The Netherlands
10 h-index
23 publications
852 citations
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54 publications · 4.6K citations
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28 publications · 1.4K citations
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14 publications · 758 citations
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15 publications · 497 citations
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13 publications · 1K citations
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