Parasitic Element Modeling

Parasitic Element Modeling is a systematic analytical framework that characterizes unintended resistive, inductive, and capacitive behaviors inherent in physical components and interconnects within high-frequency power conversion systems to enable accurate prediction and mitigation of performance-limiting effects.

546

Publications

21.9K

Citations

1.7K

Authors

500

Institutions

Publications per year

2017–2026

120

Authors

1.7K

  1. MK
    Marian K. Kazimierczuk

    Wright State University, United States

    10 publications · 587 citations

    10

    h-index

  2. FL
    F.C. Lee

    Virginia Tech, United States

    9 publications · 278 citations

    9

    h-index

  3. JW
    Johann W. Kolar

    ETH Zurich, Switzerland

    8 publications · 834 citations

    8

    h-index

  4. SW
    Shuo Wang

    University of Florida, United States

    7 publications · 351 citations

    7

    h-index

  5. AD
    Ali Davoudi

    The University of Texas at Arlington, United States

    6 publications · 461 citations

    6

    h-index

1–5 of 1.7K

Venues

  1. IEEE Transactions on Power Electronics

    54 publications · 4.6K citations

    36

    h-index

  2. IEEE Transactions on Electron Devices

    28 publications · 1.4K citations

    21

    h-index

  3. 14

    h-index

  4. 14

    h-index

  5. IEEE Transactions on Industrial Electronics

    13 publications · 1K citations

    13

    h-index

1–5