Publication | Closed Access
New method for the extraction of MOSFET parameters
822
Citations
4
References
1988
Year
Numerical AnalysisDevice ModelingElectrical EngineeringEngineeringThreshold Voltage V1Electronic EngineeringTransconductance Transfer CharacteristicsPower ElectronicsMosfet ParametersMicroelectronicsCircuit AnalysisCircuit Simulation
A new method for the extraction of the MOSFET parameters is presented. The method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage V1, the low field mobility μ0 and the mobility attenuation coefficient θ to be obtained.
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