2016 · 18 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringAgingMicroelectronicsSemiconductor DevicesDefect ModelingDevice ModelingDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsSemiconductor DefectsSemiconductor ReliabilityDevice DegradationNanoscale TransistorsReliability DegradationReliability Degradation MechanismsSubthreshold SwingSubthreshold Swing DegradationThreshold VoltageTransconductance
We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.
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Origin of NBTI variability in deeply scaled pFETs
B. Kaczer, Tibor Grasser, Ph. Roussel et al. · 2010 · 309 citations
RTS amplitudes in decananometer MOSFETs: 3-D simulation study
Asen Asenov, R. Balasubramaniam, A. R. Brown et al. · IEEE Transactions on Electron Devices · 2003 · 260 citations