Lionel Trojman

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Luis Miguel Prócel, Lionel Trojman, Jorge Moreno et al. · Journal of Applied Physics · 2013 · 55 citations

Electrical Engineering, Engineering, Experimental Evidence +14

Origins and implications of increased channel hot carrier variability in nFinFETs

B. Kaczer, J. Franco, M. Cho et al. · 2015 · 38 citations · Full text

Electrical Engineering, Engineering, Hardware Reliability +10

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Eliana Acurio, F. Crupi, Paolo Magnone et al. · Solid-State Electronics · 2017 · 34 citations · Full text

Electrical Engineering, Engineering, Applied Physics +3

Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

Lars‐Åke Ragnarsson, S. Severi, Lionel Trojman et al. · IEEE Transactions on Electron Devices · 2006 · 32 citations

Electrical Characteristics, Electrical Engineering, Engineering +8

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

Eliana Acurio, Felice Crupi, N. Ronchi et al. · IEEE Transactions on Electron Devices · 2018 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14