F. Crupi

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Luis Miguel Prócel, Lionel Trojman, Jorge Moreno et al. · Journal of Applied Physics · 2013 · 55 citations

Electrical Engineering, Engineering, Experimental Evidence +14

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Eliana Acurio, F. Crupi, Paolo Magnone et al. · Solid-State Electronics · 2017 · 34 citations · Full text

Electrical Engineering, Engineering, Applied Physics +3

Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs

Koen Martens, Jérôme Mitard, Brice De Jaeger et al. · 2008 · 23 citations

Electrical Engineering, Semiconductor Device, Engineering +14

Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods

Hee‐Dong Kim, F. Crupi, Mindaugas Lukosius et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2015 · 20 citations

Materials Science, Hfo2 Films, Electrical Engineering +14