Concepedia

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Eliana Acurio, F. Crupi, Paolo Magnone, Lionel Trojman, Gaudenzio Meneghesso, F. Iucolano

Solid-State Electronics · 2017 · 36 citations · 36 references

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36

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno et al. · IEEE Transactions on Electron Devices · 2007 · 998 citations

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Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Gaudenzio Meneghesso, G. Verzellesi, Francesca Danesin et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 642 citations · Full text

, , +17

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

, , +17

GaN HEMT reliability

Jesús A. del Alamo, Jungwoo Joh · Microelectronics Reliability · 2009 · 483 citations

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Jungwoo Joh, Jesús A. del Alamo · IEEE Transactions on Electron Devices · 2010 · 416 citations

, , +17