Eliana Acurio

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Eliana Acurio, F. Crupi, Paolo Magnone et al. · Solid-State Electronics · 2017 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +11

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

Eliana Acurio, Felice Crupi, N. Ronchi et al. · IEEE Transactions on Electron Devices · 2018 · 29 citations

Engineering, Electrical Engineering, Materials Engineering +17

Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs

Eliana Acurio, Felice Crupi, Paolo Magnone et al. · Microelectronic Engineering · 2017 · 23 citations

Engineering, Materials Engineering, Materials Science +16

Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress

Eliana Acurio, Lionel Trojman, Felice Crupi et al. · IEEE Transactions on Device and Materials Reliability · 2020 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

BTI saturation and universal relaxation in SiC power MOSFETs

Luis Sánchez, Eliana Acurio, Felice Crupi et al. · Microelectronics Reliability · 2020 · 11 citations · Full text

Engineering, Electrical Engineering, Physics +16