Lars‐Åke Ragnarsson

Origin of NBTI variability in deeply scaled pFETs

B. Kaczer, Tibor Grasser, Ph. Roussel et al. · 2010 · 309 citations

Engineering, Electrical Engineering, Microelectronics +16

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Hans Mertens, R. Ritzenthaler, Adrian Chasin et al. · 2016 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical characterization of Pb centers in (100)Si–SiO2 structures: The influence of surface potential on passivation during post metallization anneal

Lars‐Åke Ragnarsson, Per Lundgren · Journal of Applied Physics · 2000 · 92 citations

Engineering, Materials Engineering, Materials Science +17

Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices

Moonju Cho, Jae-Duk Lee, M. Aoulaiche et al. · IEEE Transactions on Electron Devices · 2012 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Estimation of fixed charge densities in hafnium-silicate gate dielectrics

V. Kaushik, Barry O’Sullivan, Geoffrey Pourtois et al. · IEEE Transactions on Electron Devices · 2006 · 67 citations

Engineering, Electrical Engineering, Materials Science +17