Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD

Structure and stability of ultrathin zirconium oxide layers on Si(001)

M. Copel, M. Gribelyuk, Evgeni Gusev · Applied Physics Letters · 2000 · 667 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

E. P. Gusev, E. Cartier, D. A. Buchanan et al. · Microelectronic Engineering · 2001 · 386 citations

Natural Sciences, Materials Engineering, Materials Science +12

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch et al. · Journal of Applied Physics · 2002 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of Al inclusion in HfO₂ on the physical and electrical properties of the dielectrics

Weihang Zhu, T. Tamagawa, M. Gibson et al. · IEEE Electron Device Letters · 2002 · 262 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

Hyoungsub Kim, Paul C. McIntyre, Krishna C. Saraswat · Applied Physics Letters · 2003 · 228 citations

Natural Sciences, Materials Engineering, Materials Science +17