F. Ducroquet

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Reynald Alcotte, M. Martin, J. Moeyaert et al. · APL Materials · 2016 · 125 citations · Full text

Engineering, Optoelectronic Devices, Electronic Devices +16

Dielectric properties, conductivity and Li+ ion motion in LiPON thin films

Lucie Le Van‐Jodin, F. Ducroquet, F. Sabary et al. · Solid State Ionics · 2013 · 116 citations

Materials Science, Dielectric Properties, Solid-state Ionic +8

Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Erwan Rauwel, C. Dubourdieu, B. Holländer et al. · Applied Physics Letters · 2006 · 86 citations

Y Addition, Hfo2 Thin Films, Engineering +18

Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO/sub 2//TiN gate stack

O. Weber, J.-F. Damlencourt, F. Andrieu et al. · IEEE Transactions on Electron Devices · 2006 · 48 citations

Gate Stack, Electrical Engineering, Semiconductor Device +12

Addition of yttrium into HfO2 films: Microstructure and electrical properties

C. Dubourdieu, Erwan Rauwel, Hervé Roussel et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2009 · 42 citations

Materials Science, Materials Engineering, Oxide Heterostructures +13