J.-F. Damlencourt

GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

Louis Hutin, C. Le Royer, J.-F. Damlencourt et al. · IEEE Electron Device Letters · 2010 · 122 citations

Engineering, Electrical Engineering, Materials Science +10

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

F. Andrieu, O. Weber, J. Mazurier et al. · 2010 · 103 citations

Engineering, Computer Engineering, Electrical Engineering +17

Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO/sub 2//TiN gate stack

O. Weber, J.-F. Damlencourt, F. Andrieu et al. · IEEE Transactions on Electron Devices · 2006 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

Engineered substrates for future More Moore and More than Moore integrated devices

L. Clavelier, C. Deguet, L. Di Cioccio et al. · 2010 · 28 citations

Engineering, Materials Engineering, Materials Science +17

55nm high mobility SiGe(:C) pMOSFETs with HfO/sub 2/ gate dielectric and TiN metal gate for advanced CMOS

O. Weber, F. Ducroquet, T. Ernst et al. · 2004 · 25 citations

Engineering, Electrical Engineering, Materials Science +17