Hot-carrier reliability characteristics of narrow-width MOSFETs

An empirical model for device degradation due to hot-carrier injection

Eiji Takeda, Norio Suzuki · IEEE Electron Device Letters · 1983 · 557 citations

Engineering, Electrical Engineering, Electronic Materials +16

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

Paul Heremans, R. Bellens, G. Groeseneken et al. · IEEE Transactions on Electron Devices · 1988 · 430 citations

Engineering, Electrical Engineering, Electronic Materials +16

Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's

Y. Toyoshima, Hiroshi Iwai, F. Matsuoka et al. · IEEE Transactions on Electron Devices · 1990 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Hot-carrier stressing damage in wide and narrow LDD NMOS transistors

Marc Bourcerie, B.S. Doyle, J.-C. Marchetaux et al. · IEEE Electron Device Letters · 1989 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16

Width-independent narrow nMOSFET reliability by split-well drive-in

C. Mazuré, A. Lill, C. Zeller · IEEE Electron Device Letters · 1990 · 12 citations

Engineering, Electrical Engineering, Materials Science +17