An empirical model for device degradation due to hot-carrier injection

Abstract

An empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented. Relationships between device degradation, drain voltage, and substrate current are clarified on the basis of experiments and modeling. The presented model makes it possible to predict the lifetime of submicron devices by determining a certain criterion, such as taking a V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> shift of 10 mV over ten years as being allowable. This could also provide quantitative guiding principles for devising "hot-carrier resistant" device structures.