Marc Bourcerie - Concepedia

Author

Marc Bourcerie

Digital Wave (United States)

Also Known As

Bourcerie, Marc, G. Groeseneken, M. Bourcerie, MARC BOURCERIE, Marc Bourcerie

Publications

665

Citations

H-Index

Concepts

All Affiliations

Digital Wave (United States)Centre National de la Recherche Scientifique Université d'Angers Institut Supérieur de l'Électronique et du Numérique

About

Marc Bourcerie is an author at Digital Wave (United States) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	12	609
2	Applied Physics	10	10	581
3	Electrical Engineering	10	12	609
4	Physics	2	2	58
5	Materials Engineering	1	1	237

Marc Bourcerie

Publications

622

Citations

H-Index

Page 1

	Year	Citations
Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2&lt;or=V/sub g/&gt;or=V/sub d/) during hot-carrier stressing of n-MOS transistors Barry M. Doyle, Marc Bourcerie, J.-C. Marchetaux, IEEE Transactions on Electron Devices Materials EngineeringSemiconductor TechnologyElectrical EngineeringCharge TrappingEngineering	1990	237
The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors B.S. Doyle, Marc Bourcerie, C. Bergonzoni, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringEngineeringCrystalline DefectsN-mos Transistors	1990	171
Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide Marc Bourcerie, B.S. Doyle, J.-C. Marchetaux, IEEE Transactions on Electron Devices EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsN-mos Transistors-oxide Traps	1990	41
Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier aging J.-C. Marchetaux, Marc Bourcerie, A. Boudou, IEEE Electron Device Letters Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	1990	30
Dynamic channel hot-carrier degradation of NMOS transistors by enhanced electron-hole injection into the oxide B.S. Doyle, Marc Bourcerie, J.-C. Marchetaux, IEEE Electron Device Letters Enhanced Electron-hole InjectionElectrical EngineeringHot-carrier StressingEngineeringNanoelectronics	1987	25
Relaxation effects in NMOS transistors after hot-carrier stressing B.S. Doyle, Marc Bourcerie, J.-C. Marchetaux, IEEE Electron Device Letters Transistor DrainElectrical EngineeringEngineeringStress-induced Leakage CurrentOxide Electronics	1987	22
Optical spectroscopy and field-enhanced emission of an oxide trap induced by hot-hole injection in a silicon metal-oxide-semiconductor field-effect transistor Marc Bourcerie, J.-C. Marchetaux, A. Boudou, Applied Physics Letters EngineeringOptoelectronic DevicesLocalized Energy LevelSilicon On InsulatorField-enhanced Emission	1989	18
Hot-carrier stressing damage in wide and narrow LDD NMOS transistors Marc Bourcerie, B.S. Doyle, J.-C. Marchetaux, IEEE Electron Device Letters Electrical EngineeringHot-carrier StressingEngineeringPhysicsNanoelectronics	1989	17
Extension of chaos anticontrol applied to the improvement of switch-mode power supply electromagnetic compatibility Cristina Morel, Marc Bourcerie, François Chapeau‐Blondeau Electrical EngineeringSpectral Peaks ComplianceFeedback Control MethodEngineeringNonlinear Circuit	2004	15
IMPROVEMENT OF POWER SUPPLY ELECTROMAGNETIC COMPATIBILITY BY EXTENSION OF CHAOS ANTICONTROL Cristina Morel, Marc Bourcerie, François Chapeau‐Blondeau Journal of Circuits Systems and Computers Nonlinear ControlElectrical EngineeringEngineeringNonlinear CircuitSmall Ripple	2005	13

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