Concepedia

C. Bergonzoni

CB

3

Publications

199

Citations

3

H-Index

1990

Active since

Affiliations

STMicroelectronics (Italy)(Current)

C. Bergonzoni is an author at STMicroelectronics (Italy) specializing in electrical engineering, applied physics, and engineering.

Top concepts

EngineeringApplied PhysicsSingle Event EffectsElectrical EngineeringDevice ModelingNanoelectronicsMicroelectronicsPhysicsCharge TransportCrystalline Defects

Publications per year

1990–1992

3

Publications

3

The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors

B.S. Doyle, Marc Bourcerie, C. Bergonzoni et al. · IEEE Transactions on Electron Devices · 1990 · 171 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Physical characterization of hot-electron-induced MOSFET degradation through an improved approach to the charge-pumping technique

C. Bergonzoni, G. Dalla Libera · IEEE Transactions on Electron Devices · 1992 · 18 citations

Charge-pumping Technique, Engineering, Charge Transport +16

The influence of gate edge shape on the degradation in hot-carrier stressing of n-channel transistors

B.S. Doyle, C. Bergonzoni, A. Boudou · IEEE Electron Device Letters · 1991 · 10 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Rows per page

1–3 of 3