Hyunsang Hwang - Concepedia

Author

Hyunsang Hwang

Pohang University of Science and Technology ORCID

Also Known As

H. Hwang, H. S. Hwang, H.-S Hwang, H.S. Hwang, Horim A. Hwang, HunSun Hwang, Hwang H., Hwang, Himchan, Hwang, Hun;Kim, Jin Ho;, Hwang, Hyunsang

509

Publications

17.2K

Citations

H-Index

188

Concepts

All Affiliations

Pohang University of Science and Technology Gwangju Institute of Science and Technology Samsung (South Korea)

About

Hyunsang Hwang is an author at Pohang University of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	57	211	12.4K
2	Applied Physics	53	176	9.9K
3	Social Sciences	18	22	3.2K
4	Medicine	4	4	884
5	Natural Sciences	3	3	45

Hyunsang Hwang

264

Publications

16.2K

Citations

H-Index

Page 1

	Year	Citations
Neuromorphic computing using non-volatile memory Geoffrey W. Burr, R. M. Shelby, Abu Sebastian, Advances in Physics X	2016	1.1K
Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element Geoffrey W. Burr, R. M. Shelby, Severin Sidler, IEEE Transactions on Electron Devices Large-scale Neural NetworkEngineeringNeural Networks (Machine Learning)Synaptic TransmissionNeural Network Simulator	2015	904
Organic core-sheath nanowire artificial synapses with femtojoule energy consumption Wentao Xu, Sung‐Yong Min, Hyunsang Hwang, Science Advances	2016	546
Improved Synaptic Behavior Under Identical Pulses Using AlO<sub><italic>x</italic></sub>/HfO<sub>2</sub>Bilayer RRAM Array for Neuromorphic Systems Jiyong Woo, Kibong Moon, Jeonghwan Song, IEEE Electron Device Letters EngineeringSynaptic TransmissionNeural NetworkSynaptic SignalingPhase Change Memory	2016	497
Access devices for 3D crosspoint memory Geoffrey W. Burr, Rohit S. Shenoy, Kumar Virwani, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitecturePhase Change Memory	2014	352
Optimization of Conductance Change in Pr<sub>1–<i>x</i></sub>Ca<sub><i>x</i></sub>MnO<sub>3</sub>-Based Synaptic Devices for Neuromorphic Systems Junwoo Jang, Sangsu Park, Geoffrey W. Burr, IEEE Electron Device Letters Neural Networks (Machine Learning)Synaptic TransmissionCircuit NeuroscienceNeurotransmissionMultilayer Perceptron	2015	297
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device Kyungah Seo, Insung Kim, Seungjae Jung, Nanotechnology EngineeringGood Yield UniformityMultilevel ConductancePhase Change MemoryNeurochip	2011	287
Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron Myonglae Chu, Byoung‐Ho Kim, Sangsu Park, IEEE Transactions on Industrial Electronics Artificial Sensory SystemsEngineeringNeural Networks (Machine Learning)Circuit NeuroscienceNeurochip	2014	287
Additional hardening in harmonic structured materials by strain partitioning and back stress Hyung Keun Park, Kei Ameyama, Jongmyung Yoo, Materials Research Letters EngineeringSevere Plastic DeformationMechanical EngineeringWork HardeningStructural Materials	2018	281
HfZrO<sub><italic>x</italic></sub>-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications Seungyeol Oh, Taeho Kim, Myunghoon Kwak, IEEE Electron Device Letters EngineeringNeural NetworkSynapse ParametersMultiferroicsElectronic Devices	2017	262

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