P. Fazan - Concepedia

Author

P. Fazan

École Polytechnique Fédérale de Lausanne

Also Known As

P C Fazan, P Fazan, P. C. Fazan, P. Fazan, P.C. Fazan, Pierre C. FAZAN, Pierre C. Fazan, Pierre Fazan

151

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne Micron (United States)IMEC SK Group (South Korea)KU Leuven

About

P. Fazan is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	50	1.5K
2	Electrical Engineering	19	43	1.4K
3	Applied Physics	18	39	900
4	Computer Engineering	13	18	660
5	Chemical Engineering	1	1	32

P. Fazan

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
A capacitor-less 1T-DRAM cell S. Okhonin, M. Nagoga, Jean-Michel Sallèse, IEEE Electron Device Letters Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringDram Cell	2002	226
A SOI capacitor-less 1T-DRAM concept S. Okhonin, M. Nagoga, J.-M. Sallese, Electrical EngineeringEngineeringFlash MemoryDram CellComputer Engineering	2002	141
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model Jean-Michel Sallèse, Matthias Bucher, F. Krummenacher, Solid-State Electronics Device ModelingElectrical EngineeringCircuit AnalysisEngineeringPhysics	2003	130
CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology P. Dainesi, A. Küng, M. Chabloz, IEEE Photonics Technology Letters EngineeringDevice IntegrationSilicon On InsulatorOptical PropertiesPhotonic Integrated Circuit	2000	93
Trends in the development of ULSI DRAM capacitors P. Fazan Integrated ferroelectrics Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)	1994	67
Charge generation in thin SiO2 polysilicon-gate MOS capacitors P. Fazan, M. Dutoit, M. Ilegems Solid-State Electronics Semiconductor DeviceApplied PhysicsCharge GenerationSilicon On Insulator	1987	62
Dielectric breakdown in (Pb,La)(Zr,Ti)O3 ferroelectric thin films with Pt and oxide electrodes Igor Stolichnov, A. K. Tagantsev, N. Setter, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringPolarization FatigueEngineering	2000	39
Electrical modeling of a pressure sensor MOSFET Jean-Michel Sallèse, Wladek Grabinski, Vincent Meyer, Sensors and Actuators A Physical Device ModelingElectrical EngineeringEngineeringPressure Sensor MosfetSensor Interface	2001	39
Principles of transient charge pumping on partially depleted SOI MOSFETs S. Okhonin, M. Nagoga, P. Fazan IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringInterface Trap DensityBias Temperature Instability	2002	39
Highly reliable, high-C DRAM storage capacitors with CVD TA/sub 2/O/sub 5/ films on rugged polysilicon G. Q. Lo, D. L. Kwong, P. Fazan, IEEE Electron Device Letters Non-volatile MemoryEngineeringRugged Poly-si ElectrodesThin Film Process TechnologyStorage Capacitor	1993	37

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