P. Fazan

A capacitor-less 1T-DRAM cell

S. Okhonin, M. Nagoga, Jean-Michel Sallèse et al. · IEEE Electron Device Letters · 2002 · 226 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +10

A SOI capacitor-less 1T-DRAM concept

S. Okhonin, M. Nagoga, J.-M. Sallese et al. · 2002 · 141 citations

Electrical Engineering, Engineering, Flash Memory +8

Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model

Jean-Michel Sallèse, Matthias Bucher, F. Krummenacher et al. · Solid-State Electronics · 2003 · 130 citations · Full text

Device Modeling, Electrical Engineering, Circuit Analysis +11

CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

P. Dainesi, A. Küng, M. Chabloz et al. · IEEE Photonics Technology Letters · 2000 · 93 citations · Full text

Engineering, Device Integration, Silicon On Insulator +16

Trends in the development of ULSI DRAM capacitors

P. Fazan · Integrated ferroelectrics · 1994 · 67 citations

Materials Science, Non-volatile Memory, Electrical Engineering +15