Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1996 · 543 citations

Engineering, Electrical Engineering, Materials Science +17

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates

S. Yoshida, S. Misawa, S. Gonda · Applied Physics Letters · 1983 · 350 citations

Engineering, Materials Engineering, Materials Science +16

Photoluminescence of ion-implanted GaN

J. I. Pánkové, J.A. Hutchby · Journal of Applied Physics · 1976 · 342 citations

Engineering, Materials Engineering, Materials Science +16

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy et al. · Journal of Crystal Growth · 1998 · 318 citations

Engineering, Materials Engineering, Materials Science +16

Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates

J. N. Kuznia, M. Asif Khan, D. T. Olson et al. · Journal of Applied Physics · 1993 · 193 citations

Natural Sciences, Materials Engineering, Materials Science +17