Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes

TLDR

Abstract

Continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT). The threshold current and voltage of the LD were 130 mA and 8 V, respectively. The threshold carrier density was 9 kA/cm2. The lifetime of the LDs under RT cw operation was 1 s due to large heat generation. Mode hopping of the emission wavelength of the LDs was observed. The average wavelength drift due to temperature increase was 0.066 nm/K between 20 and 70 °C, because of the temperature dependence of the gain profile due to band-gap narrowing of the InGaN active layer.