C. Villar

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak et al. · Physical review. B, Condensed matter · 1998 · 96 citations

Engineering, Materials Science, Physics +17

Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, E. Monroy et al. · Journal of Applied Physics · 1997 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

M. A. Sánchez-Garcı́a, E. Calleja, F.J. Sánchez et al. · Journal of Electronic Materials · 1998 · 42 citations

Engineering, Materials Engineering, Materials Science +14

Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs

A. Sanz‐Hervás, Miguel Aguilar, J. L. Sánchez-Rojas et al. · Journal of Applied Physics · 1997 · 20 citations

Natural Sciences, Materials Science, Physics +17

Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy

M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy et al. · MRS Internet Journal of Nitride Semiconductor Research · 1997 · 14 citations · Full text

Engineering, Materials Engineering, Materials Science +17